PMGI and LOR resists coatings are uniquely suited for use as a sacrificial layer and as the under-layer in bi-layer lift-off metallization processing.
Material Attributes
- Dissolution in aqueous based developers – submicron line width control.
- Compatible with most g-line, i-line, and DUV photoresists -Resistant to conventional semiconductor solvents.
- Excellent adhesion to Si, NiFe, Cu, Au, GaAs, and other III-V/ III-VI materials.
- High thermal stability < 300ºC. (Tg ~189ºC)
- DUV, E-beam, and x-ray sensitivity.
- Optically transparent.
- Spin-coatable from 10nm to ~6 um in a single coat.
- Strippable in NMP and DMSO-based removers.
- High etch rate in oxygen plasma.
   
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