Technical References: PMMA

 

2011

 

(P-11-01) Nanopatterning of PMMA on insulating surfaces with various anticharging schemes using 30 keV electron beam lithography

Mustafa Muhammad

Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4, Canada; National Institute for Nanotechnology NRC, Edmonton, Alberta T6G 2M9, Canada

J. Vac. Sci. Technol. B 29, 06F304 (2011); doi:10.1116/1.3636367

 

(P-11-02) Ultrahydrophobic PMMA micro- and nano-textured surfaces fabricated by optical lithography and plasma etching for X-ray diffraction studies

Angelo Accardo, Francesco Gentile, Federico Mecarini, Francesco De Angelis, Manfred Burghammer, Enzo Di Fabrizio, Christian Riekel

Microelectronic Engineering, Volume 88, Issue 8, August 2011, Pages 1660-1663
Proceedings of the 36th International Conference on Micro- and Nano-Engineering (MNE)

 

2010

 

(P-10-01) Complex nanostructures in PMMA made by a single process step using e-beam lithography

S. Gautsch , M. Studer, N.F. de Rooij

Microelectronic Engineering Volume 87, Issues 5-8, May-August 2010, Pages 1139-1142
The 35th International Conference on Micro- and Nano-Engineering (MNE)

 

(TG-10-01) InAlAs/InGaAs Pseudomorphic High Electron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

HUANG Jie1,2, GUO Tian-Yi1, ZHANG Hai-Ying1, XU Jing-Bo1,

FU Xiao-Jun1, YANG Hao1, NIU Jie-Bin1

1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029

2School of Physical Science and Technology, Southwest University, Chongqing 400715

CHIN. PHYS. LETT. Vol. 27, No. 11  118502, 2010

 

(P-10-02) Advanced optical methods for patterning of photonic structures in photoresist, III-V semiconductors and PMMA

Dusan Pudis, Lubos Suslik, Ivana Kubicova, Jaroslava Skriniarova and Ivan Martincek

Proc. SPIE 7746, 774608 (2010)

 

(P-10-03) QUANTITATIVE ACOUSTIC MODEL FOR ADHESION EVALUATION OF PMMA/SILICON FILM STRUCTURES
H. S. Ju and B. R. Tittmann
AIP Conf. Proc. 1211, 1182 (2010)

 

(P-10-04) Improvement of PMMA electron-beam lithography performance in metal liftoff through a poly-imide bi-layer system

F. Yaghmaie, J. Fleck, A. Gusman, R. Prohaska

Microelectronic Engineering Volume 87, Issue 12, Dec. 2010, Pages 2629-2632

 

(P-10-05) Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

Kaleli, B. and Aarnink, A.A.I. and Smits, S.M. and Hueting, R.J.E. and Wolters, R.A.M. and Schmitz, J. (2010) Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World.

In: STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands

 

 

2009

 

(P-09-01) Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique
Jing Wan, Zhen Shu, Shao-Ren Deng, Shen-Qi Xie, Bing-Rui Lu, Ran Liu, Yifang Chen, and Xin-Ping Qu
J. Vac. Sci. Technol. B 27, 19 (2009)

 

(P-09-02) Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

Huigao Duan, Jianguo Zhao, Yongzhe Zhang, Erqing Xie and Li Han

Nanotechnology, Vol 20, 135306

 

 

2008

 

(P-08-01) Mechanical properties investigation of PMMA, PC, and PS during thermal nanoimprinting 
Dan Xie, Honghai Zhang, Sheng Liu, Fulong Zhu, and Sheng Tao
Proc. SPIE 7130, 71300O (2008)

 

(P-08-02) Direct photo-etching of PMMA by focused EUV radiation from a compact laser plasma source 
Frank Barkusky, Armin Bayer, Christian Peth, and Klaus Mann
Proc. SPIE 6879, 68791M (2008)

 

(P-08-03) Three dimensional waveguide fabrication in PMMA using femtosecond laser micromachining system 
Nitin Uppal, Panos S. Shiakolas, and Mohsin Rizwan
Proc. SPIE 6882, 68820I (2008)

 

(P-08-04) Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off processHaifang Yang, Aizi Jin, Qiang Luo, Junjie Li, Changzhi Gu, Zheng Cui

Microelectronic Engineering Volume 85, Issues 5-6, May-June 2008, Pages 814-817
Proceedings of the Micro- and Nano-Engineering 2007 Conference

 

2007

(TG-07-01) Fabrication of 22 nm T-gates for HEMT applications
S. Bentley, X. Lia, D.A.J. Morana and I.G. Thaynea
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom
Microelectronic Engineering, Volume 85, Issues 5-6, May-June 2008, Pages 1375-1378
Proceedings of the Micro- and Nano-Engineering 2007 Conference - MNE 2007

(TG-07-02) Fabrication of 35-nm Zigzag T-gate Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pHEMTs
Kang-Sung Lee, Young-Su Kim, Yun-Ki Hong, and Yoon-Ha Jeong
Department of Electronic and Electrical Engineering
Pohang University of Science and Technology, Hyoja-dong, Nam-gu, Pohang, Gyungbuk, ROK IEEE Nanotechnology Materials and Devices Conference, 2007
IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 8, page 672-6, AUGUST 2007

(P-07-01) Replication fidelity improvement of PMMA microlens array based on weight evaluation and optimization
Bing-yan Jiang, Long-jiang Shen, Hua-jiang Peng, and Xiang-lin Yin
Proc. SPIE 6722, 67220P (2007)

(P-07-02) Fabrication of planar cobalt electrodes separated by a sub-10 nm gap using high resolution electron beam lithography with negative PMMA
L. Ressiera, J. Grisoliaa, C. Martina, J.P. Peyradea, B. Vialleta, C. Vieub
Ultramicroscopy Volume 107, Issues 10-11, October 2007, Pages 985-988

(P-07-03) Fabrication of ferromagnetic nanoconstrictions by electron beam lithography using LOR/PMMA bilayer technique
Yifang Chena, , Zhengqi Lub, Xudi Wangc, Zheng Cuia, Genhua Panb, Yun Zhoub, M. Muñozd, Cheng Haod, Lu Yonghuad, N. Garciad
Microelectronic Engineering Volume 84, Issues 5-8, May-August 2007, Pages 1499-1502
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering

2006

(P-06-1) Fabrication of large-sag aspheric micro-optics with nanometer accuracy using electron-beam lithography on curved substrates
Zhaohui H. Yang and James R. Leger
Opt. Eng. 45, 043401 (2006)

(P-06-2) Exposure of Thick Polymethylglutarimide Films for Structural MEMS
Ian G. Foulds, Robert W. Johnstone, See-Ho H. Tsang, and M (Ash) Parameswaran
ECS Trans. 3, (10) 299 (2006)

(P-06-3) Robust shadow-mask evaporation via lithographically controlled undercut
B. Cord, C. Dames, K. K. Berggren, and J. Aumentado
J. Vac. Sci. Technol. B 24, 3139 (2006)

(P-06-4) Effect of cold development on improvement in electron-beam nanopatterning resolution and line roughness
L. E. Ocola and A. Stein
J. Vac. Sci. Technol. B 24, 3061 (2006)

(P-06-5) Megasonic-assisted development of nanostructures
David Küpper, Daniel Küpper, Thorsten Wahlbrink, Jens Bolten, Max C. Lemme, Yordan M. Georgiev, and Heinrich Kurz
J. Vac. Sci. Technol. B 24, 1827 (2006)

(P-06-6) Fabrication of metallic air bridges using multiple-dose electron beam lithography
E. Girgis, J. Liu, and M. L. Benkhedar
Appl. Phys. Lett. 88, 202103 (2006)

(P-06-7) Effects of low-voltage electron beam lithography
Mehdi Bolorizadeh and David C. Joy
Proc. SPIE 6151, 61512C (2006)

(P-06-8) Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures
M. Aktary, M. Stepanova, and S. K. Dew
J. Vac. Sci. Technol. B 24, 768 (2006)

2005

(P-05-1) Fabrication of 30nm T-gate High Electron Mobility Transistors Using a Bi-layer of PMMA and UVIII
E. Boyd*, H. Zhou, H. McLelland, D.A.J. Moran, S. Thoms and I.G. Thayne
IEEE 2005

(P-05-2) Sub-50 nm T-gate pseudomorphic HEMTs using low temperature development method
Kang-Sung Lee, Kyung-Taek Lee, Young-Su Kim, and Yoon-Ha Jeong
Dept of EE Pohang Univ of Sci and Tech (POSTECH) (NCNT), Pohang, Kyungbuk, RoK
Proceedings of 2005 5th IEEE Conf on Nanotech, Nagoya, Japan and Paper No. TH-P2-4, Jul., 11-15 2005

(P-05-3) Process control of photoresist undercut for lift-off patterns below 100 nm
Chao-Peng Chen, Jei-Wei Chang, Rina Kaji, and Hromichi Kawasaki
Proc. SPIE 5751, 601 (2005)

(P-05-4) A novel low-temperature method to fabricate MEMS resonators using PMGI as a sacrificial layer
S. Young, D. Weston, B. Dauksher, D. Mancini, S. Pacheco2, P. Zurcher2, M. Miller2
Motorola Labs, 2100 E Elliot Road, Tempe, AZ 85284, USA 2 Freescale Semiconductor, 2100 E Elliot Road, Tempe, AZ 85284
J. Micromech. Microeng. 15 (2005) 1824 - 1830

(P-05-5) Nanometer metal line fabrication using a ZEP520/50K PMMA bilayer resist by e-beam lithography
Lihua An, Yuankai Zheng, Kebin Li, Ping Luo, and Yihong Wu
J. Vac. Sci. Technol. B 23, 1603 (2005)

(P-05-6) Sub-50 nm T-gate pseudomorphic HEMTs using low temperature development method
Kang-Sung Lee; Kyung-Taek Lee; Young-Su Kim; Yoon-Ha Jeong;
Nanotechnology, 2005. 5th IEEE Conference on 11-15 July 2005 Page(s):832 - 835 vol. 2

(P-05-7) Fabrication of monolithic multilevel high-aspect-ratio ferromagnetic devices
Tao Wang; McCandless, A.B.; Lienau, R.M.; Kelly, K.W.; Hensley, D.; Desta, Y.; Zhong-Geng Ling;
Microelectromechanical Systems, Journal of Volume 14, Issue 2, April 2005 Page(s):400 - 409

(P-05-8) Micro- and nanofabrication processes for hybrid synthetic and biological system fabrication
Verma, V.; Hancock, W.O.; Catchmark, J.M.;
Advanced Packaging, IEEE Transactions on [see also Components, Packaging and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on Volume 28, Issue 4, Nov. 2005 Page(s):584 – 593

2004

(P-04-1) 0.15?m In0.4GaAs/In0.4AlAs Metamorphic HEMT's (M-HEMT's) Using A Novel Triple Shaped Gate Structure Assisted By PMGI Resist
Dae-Hyun Kim, Suk-Jin Kim, *Jae-Hak Lee, *Ki-Woong Chung, and Kwang-Seok Seo
Seoul National University, Republic Of Korea
* WAVICS. Co. LTD, Republic Of Korea
Indium Phosphide and Related Materials, 16th IPRM 2004 International Conference IEEE

(P-04-2) Cost Effective T-Gate Process for PHEMT-based MMIC with Large Gate Periphery
B. Hadad2*, I. Toledo2, G. Bunin1, J. Kaplun1, M. Leibovitch1, Y. Shapira2 , Y. Knafo2
1Gal-El (MMIC), Ashdod 77102, Israel, 2Dept of Physical Electronics, Tel-Aviv U, Israel
GaAs ManTech 2004

(P-04-3) 0.15?m In0.4GaAs/In0.4AlAs Metamorphic HEMT's (M-HEMT's) Using A Novel Triple Shaped Gate Structure Assisted By PMGI Resist
Dae-Hyun Kim, Suk-Jin Kim, *Jae-Hak Lee, *Ki-Woong Chung, and Kwang-Seok Seo
Seoul National University, Republic Of Korea (ROK)
WAVICS. Co. LTD, Seoul, ROK
Indium Phosphide and Related Materials, 16th IPRM 2004 International Conference IEEE

(P-04-4) Extreme ultraviolet lithography based nanofabrication using a bilevel photoresist
A. A. Talin, G. F. Cardinale, T. I. Wallow, P. Dentinger, S. Pathak, D. Chinn, and D. R. Folk
J. Vac. Sci. Technol. B 22, 781 (2004)

(P-04-5) Suppression of kink phenomenon in ultra-high-speed strained InAs- inserted E-mode HEMTs with a new 0.1 /spl mu/m Y-shaped Pt-buried gate and their impacts on device performance
Dae-Hyun Kim; Tae-Woo Kim; Hun-Hee Noh; Jae-Hak Lee; Wei Feng; Xiaogang Xie; Quangang Du; Jiang Jian; Jong-In Song; Kwang-Seok Seo;
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
13-15 Dec. 2004 Page(s):1027 - 1030

(P-04-6) Process conditions for the fabrication of subwavelength scale structures by x-ray lithography in PMMA films
Sven C. Achenbach, Timo Mappes, Rainer Fettig, Jeanine Kando, and Juergen Mohr
Proc. SPIE 5450, 86 (2004)

(P-04-7) Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)
Wenchuang (Walter) Hu, Koshala Sarveswaran, Marya Lieberman, and Gary H. Bernstein
J. Vac. Sci. Technol. B 22, 1711 (2004)

(P-04-8) High performance of 0.15/spl mu/m quasi enhancement-mode (E-mode) In/sub 0.4/GaAs/In/sub 0.4/AlAs metamorphic HEMTs on GaAs substrate using new triple-gate technology
Dae-Hyun Kim; Hun-Hee Noh; Suk-Jin Kim; Jae-Hak Lee; Ki-Woong Chung; Kwang-Seok Seo;
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
31 May-4 June 2004 Page(s):374 - 377

(P-04-9) Synthesis of nanoscale structures in single crystal silicon carbide by electron beam lithography
Bieber, J.A.; Saddow, S.E.; Moreno, W.A.;
Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on
Volume 1, 3-5 Nov. 2004 Page(s):158 - 163

(P-04-10) High performance 50 nm T-Gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.70/Ga/sub 0.30/As pseudomorphic high electron mobility transistors
Xin Cao; Thorns, S.; McLelland, H.; Elgaid, K.; Stanley, C.; Thayne, I.;
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
31 May-4 June 2004 Page(s):292 - 294

2003

(P-03-1) Fabrication of sub-50 nm critical feature for magnetic recording device using electron-beam lithography
XiaoMin Yang,a) Andrew Eckert, K. Mountfield, H. Gentile, C. Seiler, S. Brankovic, and E. Johns
Seagate Research, 1251 Waterfront Place, Pittsburgh, Pennsylvania 15222-4215
J. Vac. Sci. Technol. B 21.6., Nov-Dec 2003 1071-1023

(P-03-2) Electron-beam lithography method for sub-50-nm isolated trench with high aspect ratio
XiaoMin Yang, Andrew R. Eckert, Keith Mountfield, Harold Gentile, Carl Seiler, Stanko Brankovic, Robert Harris, and Earl Johns
Proc. SPIE 5037, 168 (2003)

(P-03-3) Challenges of implementing 193-nm lithography in printing sub-70nm line patterns for thin film heads
Chun-Ming Wang, Justin J. Hwu, and Timothy J. Minvielle
Proc. SPIE 5040, 1335 (2003)

(P-03-4) Challenges of implementing 193-nm lithography in printing sub-70nm line patterns for thin film heads
Chun-Ming Wang, Justin J. Hwu, and Timothy J. Minvielle
Proc. SPIE 5040, 1335 (2003)

(P-03-5) Fabrication of sub-50 nm critical feature for magnetic recording device using electron-beam lithography
XiaoMin Yang, Andrew Eckert, Keith Mountfield, Harold Gentile, Carl Seiler, Stanko Brankovic, and Earl Johns
J. Vac. Sci. Technol. B 21, 3017 (2003)

(P-03-6) Optical biosensor array based on natural ion channels
Cordelia A. Zimmerer, Hans-Georg Braun, Marco Kitsche, Gerald Steiner, Steffen Friedrich, and Reiner Salzer
Proc. SPIE 5047, 403 (2003)

(P-03-7) Large-area definition of nanoelectrodes by nanoimprint lithography
Matthias Wissen, Hella-Christin Scheer, Hubert Schulz, J. T. Horstmann, M. Scherff, and Wolfgang R. Fahrner
Proc. SPIE 5253, 122 (2003)

(P-03-8) Transient measurement of resist charging during electron beam exposure
Min Bai, W. Dan Meisburger, and R. Fabian W. Pease
J. Vac. Sci. Technol. B 21, 106 (2003)

(P-03-9) Efficient removers for poly(methylmethacrylate)
Qingling Hang, Davide A. Hill, and Gary H. Bernstein
J. Vac. Sci. Technol. B 21, 91 (2003)

(P-03-10) Fabrication of ultra thick, ultra high aspect ratio microcomponents by deep and ultra deep X-ray lithography
Jian, L.; Loechel, B.; Scheunemann, H.-U.; Bednarzik, M.; Desta, Y.M.; Goettert, J.;
MEMS, NANO and Smart Systems, 2003. Proceedings. International Conference on
20-23 July 2003 Page(s):10 - 14

(P-03-11) 3D fabrication using deep X-ray mask with integrated micro-actuator
Kwang-Cheol Lee; Lee, S.S.;
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on 19-23 Jan. 2003 Page(s):558 - 561

(P-03-12) Evolution of T-shaped gate lithography for compound semiconductors field-effect transistors
Tabatabaie-Alavi, K.; Shaw, D.M.; Duval, P.J.;
Semiconductor Manufacturing, IEEE Transactions on
Volume 16, Issue 3, Aug. 2003 Page(s):365 - 369

(P-03-13) Reduction in roughness of resist features in PMMA due to the absence of rinsing step
Khalid, M.N.; Yasin, S.; Hasko, D.G.; Ahmed, H.;
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
29-31 Oct. 2003 Page(s):66 - 67

(P-03-14) Fabrication of 0.1/spl mu/m-gate InP HEMTs using i-Line lithography
Sawada, K.; Makiyama, K.; Takahashi, T.; Nozaki, K.; Igarashi, M.; Kon, J.; Hara, N.;
Indium Phosphide and Related Materials, 2003. International Conference on
12-16 May 2003 Page(s):65 - 68

2002

(P-02-1) Sub-100 nm T-gates utilizing a single E-beam lithography exposure process
Eric S. Ainley, Scott Ageno, Kevin J. Nordquist, and Douglas J. Resnick
Proc. SPIE 4690, 1150 (2002)

(P-02-2) A novel asymmetric gate recess process for InP HEMTs
Robin, F.; Meier, H.; Homan, O.J.; Bachtold, W.;
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
12-16 May 2002 Page(s):221 - 224

(P-02-3) Micro-electro-mechanical tunable vertical cavity surface emitting lasers using metal flexures and a top dielectric stack distributed Bragg reflector
Harvey, M.C.; Lott, J.A.; Nelson, T.R., Jr.; Stintz, A.; Malloy, K.J.;
Semiconductor Laser Conference, 2002. IEEE 18th International 29 Sept.-3 Oct. 2002 Page(s):11 - 12

(P-02-4) Low stress development of poly(methylmethacrylate) for high aspect ratio structures
M. J. Rooks, E. Kratschmer, R. Viswanathan, J. Katine, R. E. Fontana, Jr., and S. A. MacDonald
J. Vac. Sci. Technol. B 20, 2937 (2002)

(P-02-5) Molecular patterning through high-resolution polymethylmethacrylate masks
Qingling Hang, Yuliang Wang, Marya Lieberman, and Gary H. Bernstein
Appl. Phys. Lett. 80, 4220 (2002)

(P-02-6) PMMA direct patterning by synchrotron radiation using SOG mask
Taniguchi, J.; Takezawa, S.; Kanda, K.; Haruyama, Y.; Matsui, S.; Miyamoto, I.;
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
6-8 Nov. 2002 Page(s):214

(P-02-7) Microlens fabrication by the modified LIGA process and its modeling and analysis
Sung-Keun Lee; Dong Sung Kim; Sang Sik Yang; Lee, S.S.; Tai Hun Kwon;
Optical MEMS, 2002. Conference Digest. 2002 IEEE/LEOS International Conference on
20-23 Aug. 2002 Page(s):77 - 78

(P-02-8) Microlens fabrication by the modified LIGA process
Sung-Keun Lee; Kwang-Cheol Lee; Lee, S.S.;
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
20-24 Jan. 2002 Page(s):520 - 523

(P-02-9) A novel asymmetric gate recess process for InP HEMTs
Robin, F.; Meier, H.; Homan, O.J.; Bachtold, W.;
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
12-16 May 2002 Page(s):221 - 224

2001

(P-01-1) Electron-beam direct-write polymeric optical waveguides
Wing H. Wong and Edwin Y. B. Pun
Proc. SPIE 4453, 100 (2001)

(P-01-2) Influence of thermal properties of polymers on NanoImprint Lithography performance
Perret, C.; Gourgon, C.; Micouin, G.; Grolier, J.P.E.;
Microprocesses and Nanotechnology Conference, 2001 International
31 Oct.-2 Nov. 2001 Page(s):98 - 99

(P-01-3) Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography
Nakano, A.; Okamoto, K.; Kozawa, T.; Tagawa, S.;
Microprocesses and Nanotechnology Conference, 2001 International
31 Oct.-2 Nov. 2001 Page(s):236 - 237

2000

(P-00-1) Master replication into thermosetting polymers for nanoimprinting
H. Schulz, D. Lyebyedyev, H.-C. Scheer, K. Pfeiffer, G. Bleidiessel, G. Grützner, and J. Ahopelto
J. Vac. Sci. Technol. B 18, 3582 (2000)

(P-00-2) Effects of molecular properties on nanolithography in PMMA

  • E. Dobisz, S. Brandow, R. Bass, J. Mitterender - NRL

  • J. Vac. Sci. Technology B 18(1), pp 107- 111 Jan/Feb 2000

(P-00-3) Influence of developer and developer conditions on the behavior of high molecular weight e-beam resists

  • D. Hasko, S. Yasin, A. Mumtaz - University of Cambridge

  • J. Vac. Sci. Technology B 18(6), pp 3441- 3444 Nov/Dec 2000

(P-00-4) First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists
Chen, Y.; Lodhi, T.; McLelland, H.; Edgar, D.L.; Macintyre, D.; Thoms, S.; Stanley, C.R.; Thayne, I.G.;
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
13-14 Nov. 2000 Page(s):202 - 205

(P-00-5) Near- and mid-infrared ?Yablonovite ? structures fabricated in PMMA by X-ray lithography
Cuisin, C.; Chelnokov, A.; Chen, Y.; Decanini, D.; Lourtioz, J.-M.;
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
10-15 Sept 2000 Page(s):1 pp.

(P-00-6) Fabrication of sub-micron structures with high aspect ratio for MEMS using deep X-ray lithography
Ueno, H.; Nishi, N.; Sugiyama, S.;
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on 23-27 Jan. 2000 Page(s):596 - 601

1999

(P-99-1) A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 ?m
Nawaz, M.; Persson, S.H.M.; Zirath, H.; Choumas, E.; Mellberg, A.;
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
16-20 May 1999 Page(s):14 - 16 suppl.

(P-99-2) DUV and e-beam chemistry of high-sensitivity positive PMMA-based resist
A. Uhl, Juergen Bendig, Ulrich A. Jagdhold, and Joachim J. Bauer
Proc. SPIE 3678, 1381 (1999)

(P-99-3) Novel fabrication technique for 0.1 µm T-shaped gate with i-Line negative resist and poly(methylmethacrylate)
Yoshiharu Anda, Toshinobu Matsuno, Mitsuru Tanabe, Tomoya Uda, Manabu Yanagihara, Katsunori Nishii, Kaoru Inoue, Nobumitsu Hirose, and Toshiaki Matsui
J. Vac. Sci. Technol. B 17, 320 (1999)

(P-99-4) Low voltage electron beam lithography in PMMA
A. Olkhovets and H. G. Craighead
J. Vac. Sci. Technol. B 17, 1366 (1999)

(P-99-5) Fabrication of surface gratings in GaAs and AlGaAs by electron beam lithography and chemically assisted ion beam etching
Jens Dienelt, Karsten Otte, Klaus-Peter Zimmer, F. Pietag, and Frieder Bigl
Proc. SPIE 3739, 195 (1999)

(P-99-6) Electron beam lithography process for T- and -shaped gate fabrication using chemically amplified DUV resists and PMMA
Y. Chen, D. Macintyre, and S. Thoms
J. Vac. Sci. Technol. B 17, 2507 (1999)

(P-99-7) Fabrication of surface gratings in GaAs and AlGaAs by electron beam lithography and chemically assisted ion beam etching
Jens Dienelt, Karsten Otte, Klaus-Peter Zimmer, F. Pietag, and Frieder Bigl
Proc. SPIE 3739, 195 (1999)

(P-99-8) Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA
Chen, Y.; Macintyre, D.; Thoms, S.;
Electronics Letters Volume 35, Issue 4, 18 Feb. 1999 Page(s):338 - 339

(P-99-9) A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 ?m
Nawaz, M.; Persson, S.H.M.; Zirath, H.; Choumas, E.; Mellberg, A.;
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
16-20 May 1999 Page(s):14 - 16 suppl.

(P-99-10) The fabrication of grating for 1.55 ?m InGaAsP DFB laser array by e-beam lithography
Yue-Bun, E.; Wong, P.W.H.;
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference Volume 2, 18-22 Oct. 1999 Page(s):1545 - 1547 vol.2

(P-99-11) A dynamic simulation of electron beam induced charging-up of insulators
Kotera, M.; Yamaguchi, K.; Suga, H.;
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International 6-8 July 1999 Page(s):166 - 167

1998

(P-98-1) Study on fabrication of high aspect ratio electrostatic microactuators using LIGA process
Kondo, R.; Suzuki, K.; Sugiyama, S.;
Micromechatronics and Human Science, 1998. MHS '98. Proceedings of the 1998 International Symposium on 25-28 Nov. 1998 Page(s):155 - 160

(P-98-2) Positive resists for electron-beam and X-ray lithography
Bulgakova, S.A.; Mazanova, L.M.; Semchikov, Yu.D.; Lopatin, A.Y.; Luchin, V.I.; Salashchenko, N.N.;
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of 23-26 Sept. 1998 Page(s):81 - 82

(P-98-3) Exposure of PMMA with STM under ambient condition
Rujiang Tian; Jieping Han; Shouwu Wang;
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
21-23 Oct. 1998 Page(s):106 - 108

1997 and earlier

(P-96-1) Electron-beam/ultraviolet hybrid exposure combined with novel bilayer resist system for a 0.15 mm T-shaped gate fabrication process
H. Takano, H. Nakano, H. Minami, K. Hosogi, N. Yoshida, and K. Sato, Y. Hirose and N. Tsubouchi
High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation, Itami 664, Japan
J. Vac. Sci. Technol. B 14(6), Nov/Dec 1996

(P-96-2) Effect of molecular weight on poly (methyl methacrylate) resolution

  • M. Khoury and D. Ferry - Arizona State

  • J. Vac. Sci. Technology B 14(1), pp 75- 79 Jan/Feb 1996

(P-94-1) Plasma resistant modified i-Line, deep UV and E-beam resists
Bousaba, J.E.; Tranjan, F.M.; Qushair, L.E.; DuBois, T.D.; Bobbio, S.M.; Jose, M.T.; Nickel, J.L.; Jones, S.K.; Dudley, B.;
Electronic Components and Technology Conf., 1994. Proceedings., 44th 1-4 May 1994 P:712 - 715

(P-87-1) Two-layer resist structure for electron-beam fabrication of a submicrometer gate length GaAs device
Kato, T.; Hayashi, K.; Sasaki, Y.;
Electron Devices, IEEE Transactions on Volume 34, Issue 4, Apr 1987 Page(s):753 - 758

(P-85-1) High-speed GaAs frequency dividers using a self-aligned dual-level double lift-off substitution gate MESFET process
Chang, M.F.; Lee, S.J.; Walton, E.R.; Lee, C.P.; Ryan, F.J.; Vahrenkamp, R.P.; Kirkpatrick, C.G.;
Electron Device Letters, IEEE Volume 6, Issue 6, Jun 1985 Page(s):279 – 281

(P-75-1) Developer Characteristics of Poly-(Methyl Methacrylate) Electron Resist

  • J. Greeneich - GMRL

  • J. Electrochem. Soc., Vol 122, 970-6, 1975

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