Polymethylglutarimide (PMGI) Resists

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PMGI & LOR Under Layer Resists

PMGI and LOR resists enable high yield, metal lift-off processing in a variety of applications from data storage and wireless ICs, to MEMS. Used beneath photoresists in a bi-layer stack, PMGI and LOR extend the limits of lift-off processing beyond where single layer resist strategies can reach. This includes very high resolution metallization (<0.25µm), as well as very thick (>4µm) metallization. These unique materials are available in a variety of formularies to meet virtually any customer need.

Material uses:

Metal lift-off processing
Airbridge fabrication
Release layers

Material attributes:

Won’t intermix when over-coated with imaging resists
Single step development of bi-layer stack in TMAH, or KOH developers
High thermal stability: Tg ~190 C
Removes quickly and cleanly in conventional resist strippers
Enables sub 0.25µm micron bi-layer resist imaging
Enables high yield, very thick (>3µm) metal lift-off processing

Bi-Layer Lift-Off Process

Step 1. LOR or PMGI is coated

Step 2. The imaging resist is coated onto the LOR or PMGI layer.

Step 3. The imaging resist is exposed.

Step 4. The wafer is developed.

Step 5. Metal Deposition

Step 6. Lift-Off!

GaAs Modulator with Al airbridge Source: Nortel PMGI used as a sacrificial layer on which the airbridge was built. The PMGI layer was subsequently removed with conventional resist removal processing.